Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale

Ibrahim Saleh; Tarek Fayez; Mustafah Ahmad

2022, Vol: 3, Issue: 1

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Original Article

AJAS. 2021; 2(2): 2-8

Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale

Ibrahim Saleh, Tarek Fayez, Mustafah Ahmad.

Abstract
We report the synthesis, structure and electrical properties in boron- and phosphorus-doped hydrogenated silicon and germanium multilayers (P- a-Si:H/a-Ge:H and B-doped a-Si:H/a-Ge:H) , with the activation energy of crystallization of the P-and B-doped are 42.15 and 67.6 kJ/mol, respectively. In this materials, the incorporation of boron or phosphorus leads to decrease activation energies of crystallization and an increase of the conductivity. The photo-electrical conductivity increases more rapidly than dark - electrical conductivity which confirms the sensitive thin film for light.

Key words: Doped, nano-multilayers (NMLs), a-Si:H/a-Ge:H, hydrogen dilution, structure, electrical conductivity, crystallization, Avrami's equation

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Pubmed Style

Saleh I, Fayez T, Ahmad M, . Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale. AJAS. 2021; 2(2): 2-8.

Web Style

Saleh I, Fayez T, Ahmad M, . Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale. https://www.albahitjas.com/?mno=85880 [Access: April 05, 2022].

AMA (American Medical Association) Style

Saleh I, Fayez T, Ahmad M, . Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale. AJAS. 2021; 2(2): 2-8.

Vancouver/ICMJE Style

Saleh I, Fayez T, Ahmad M, . Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale. AJAS. (2021), [cited April 05, 2022]; 2(2): 2-8.

Harvard Style

Saleh, I., Fayez, T., Ahmad, M. & (2021) Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale. AJAS, 2 (2), 2-8.

Turabian Style

Saleh, Ibrahim, Tarek Fayez, Mustafah Ahmad, and . 2021. Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale. Albahit journal of applied sciences, 2 (2), 2-8.

Chicago Style

Saleh, Ibrahim, Tarek Fayez, Mustafah Ahmad, and . "Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale." Albahit journal of applied sciences 2 (2021), 2-8.

MLA (The Modern Language Association) Style

APA (American Psychological Association) Style

Saleh, I., Fayez, T., Ahmad, M. & (2021) Thermal Stability and Electrical Properties of boron- and phosphorus-doped hydrogenated silicon and germanium multilayers in nanoscale. Albahit journal of applied sciences, 2 (2), 2-8.

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